APT10026JFLL
120
OPERATION HERE
LIMITED BY RDS (ON)
30,000
I
D
, DRAIN CURRENT (AMPERES)
50
C, CAPACITANCE (pF)
10,000
100µS
Ciss
10
1mS
TC = +25°C
TJ = +150°C
SINGLE PULSE
1,000
Coss
10mS
100
Crss
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
1
1
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 38A
100
12
VDS = 200V
TJ =+150°C
TJ =+25°C
8
VDS = 500V
VDS = 800V
10
4
100 150 200 250 300 350 400
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
160
140
120
t
d(on)
and t
d(off)
(ns)
V
0
0
50
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V
DD
G
t
d(off)
80
DD
G
= 667V
R
= 3Ω
T = 125°C
J
L = 100µH
= 667V
t
f
t
r
and t
f
(ns)
100
80
60
40
20
0
R
= 3Ω
60
T = 125°C
J
L = 100µH
40
20
t
d(on)
0
5 10 15 20 25 30 35 40 45 50 55 60
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
t
r
4000
3500
SWITCHING ENERGY (µJ)
V
DD
G
= 667V
5 10 15 20 25 30 35 40 45 50 55 60
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10000
V
I
DD
= 667V
R
= 3Ω
D
J
= 38A
E
off
T = 125°C
J
SWITCHING ENERGY (µJ)
3000
2500
2000
1500
1000
500
0
L = 100µH
E
ON
includes
diode reverse recovery.
8000
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
6000
4000
E
on
2000
12-2003
E
off
050-7114 Rev A
0
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
5 10 15 20 25 30 35 40 45 50 55 60
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
ADPOW [ ADVANCED POWER TECHNOLOGY ]
