DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Symbol
I
S
I
SM
V
SD
dv
/
dt
APT10026JFLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 500V
I
D
= 38A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 500V
I
D
= 38A @ 25°C
R
G
= 0.6Ω
6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 667V, V
GS
= 15V
6
I
D
= 38A, R
G
= 3Ω
INDUCTIVE SWITCHING @ 125°C
V
DD
= 667V V
GS
= 15V
I
D
= 38A, R
G
= 3Ω
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
MIN
TYP
MAX
UNIT
pF
7114
1268
224
267
34
173
17
8
39
9
1196
713
2014
971
MIN
TYP
MAX
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
1
2
dt
nC
ns
µ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
V/ns
ns
30
120
1.3
18
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MIN
(Body Diode)
(V
GS
= 0V, I
S
= -38A)
5
dv
/
t
rr
Reverse Recovery Time
(I
S
= -38A,
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -38A,
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -38A,
di
/
dt
= 100A/µs)
Characteristic
Junction to Case
Junction to Ambient
310
625
2.0
6.0
15
26
TYP
MAX
Q
rr
I
RRM
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
UNIT
°C/W
0.21
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.25
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
4 Starting T
j
= +25°C, L = 7.11mH, R
G
= 25Ω, Peak I
L
= 30A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
30A
di
/
dt
≤
700A/µs
VR
≤
1000
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.15
0.7
12-2003
0.5
0.10
0.3
0.05
0.1
0.05
10
-5
10
-4
SINGLE PULSE
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-7114 Rev A
0
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
ADPOW [ ADVANCED POWER TECHNOLOGY ]
