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APL1001P 参数 Datasheet PDF下载

APL1001P图片预览
型号: APL1001P
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管功率场效应晶体管脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 118 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APL1001P
P-Pack Package Outline
41.53 (1.635)
41.02 (1.615)
35.18 (1.385)
34.67 (1.365)
28.70 (1.130)
28.45 (1.120)
3.43 (.135)
2.92 (.115)
(4-Places)
9.27 (.365)
8.64 (.340)
1.40 (.055)
1.02 (.040)
3.43 (.135)
2.92 (.115)
(4-Places)
Source
Drain
4.06 (.160)
3.81 (.150)
(5 Places)
51.05 (2.01)
50.55 (1.99)
35.81 (1.41)
35.31 (1.39)
29.34 (1.155)
29.08 (1.145)
10.92 (.430)
10.67 (.420)
Gate
Source Sense
8-2001
5.33 (.210)
4.83 (.190)
Rev -
11.63 (.458)
11.13 (.438)
4.39 (.173)
4.14 (.163)
(4 Places)
12.45 (.490)
11.94 (.470)
.635 (.025)
.381 (.015)
Dimensions in Millimeters and (Inches)
050-5899
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058