D
P-Pack
G
S
APL1001P
1000V 18.0A 0.60
W
HERMETIC PACKAGE
POWER MOS IV
®
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T
C
= 25°C unless otherwise specified.
APL1001P
UNIT
Volts
Amps
1000
18
72
±30
520
4.16
-55 to 150
and Inductive Current Clamped
Volts
Watts
W/°C
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
1000
18
0.60
25
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 8V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D
[Cont.])
Ohms
µA
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
250
±100
2
4
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QCS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
UNIT
°C/W
0.24
0.06
8-2001
050-5899
Rev -
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
ADPOW [ ADVANCED POWER TECHNOLOGY ]
