REF19x Series
ELECTRICAL CHARACTERISTICS—REF195 @ −40°C ≤ TA ≤ +125°C
@ VS = 5.20 V, −40°C ≤ TA ≤ +125°C, unless otherwise noted.
Table 16.
Parameter
TEMPERATURE COEFFICIENT1, 2
Mnemonic
Condition
Min
Typ
Max
Unit
E Grade
F Grade
G Grade3
TCVO/°C
IOUT = 0 mA
2
5
10
ppm/°C
ppm/°C
ppm/°C
LINE REGULATION4
E Grade
ΔVO/ΔVIN
5.20 V ≤ VS ≤ 15 V, IOUT = 0 mA
VS = 6.45 V, 0 mA ≤ IOUT ≤ 20 mA
5
10
ppm/V
ppm/V
F and G Grades
LOAD REGULATION4
E Grade
ΔVO/ΔVLOAD
5
ppm/mA
F and G Grades
DROPOUT VOLTAGE
10
ppm/mA
VS = 5.60 V, ILOAD = 10 mA
VS = 6.45 V, ILOAD = 20 mA
0.60
1.45
V
V
VS − VO
1 For proper operation, a 1 μF capacitor is required between the output pin and the GND pin of the device.
2 TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/°C.
TCVO = (VMAX − VMIN)/VO(TMAX − TMIN
)
3 Guaranteed by characterization.
4 Line and load regulation specifications include the effect of self-heating.
ELECTRICAL CHARACTERISTICS—REF196 @ TA = 25°C
@ VS = 3.5 V, TA = 25°C, unless otherwise noted.
Table 17.
Parameter
Mnemonic
VO
Condition
Min
Typ
Max
3.310
8
Unit
V
INITIAL ACCURACY1
G Grade
LINE REGULATION2
G Grade
LOAD REGULATION2
G Grade
IOUT = 0 mA
3.290 3.3
ΔVO/ΔVIN
3.50 V ≤ VS ≤ 15 V, IOUT = 0 mA
4
6
ppm/V
ΔVO/ΔVLOAD
VS − VO
VS = 5.0 V, 0 mA ≤ IOUT ≤ 30 mA
VS = 4.1 V, ILOAD = 10 mA
VS = 4.3 V, ILOAD = 30 mA
1000 hours @ 125°C
15
ppm/mA
DROPOUT VOLTAGE
0.80
1.00
V
V
LONG-TERM STABILITY3
NOISE VOLTAGE
DVO
eN
1.2
33
mV
0.1 Hz to 10 Hz
μV p-p
1 Initial accuracy includes temperature hysteresis effect.
2 Line and load regulation specifications include the effect of self-heating.
3 Long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
Rev. I | Page 11 of 28
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