AT45DB081D
Table 18-3. DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
CS, RESET, WP = VIH, all
inputs at CMOS levels
IDP
Deep Power-down Current
15
25
μA
CS, RESET, WP = VIH, all
inputs at CMOS levels
ISB
Standby Current
25
7
50
10
12
14
15
17
μA
mA
mA
mA
mA
mA
f = 20MHz; IOUT = 0mA;
VCC = 3.6V
f = 33MHz; IOUT = 0mA;
8
VCC = 3.6V
Active Current, Read
Operation
(1)
ICC1
f = 50MHz; IOUT = 0mA;
10
11
12
VCC = 3.6V
f = 66MHz; IOUT = 0mA;
V
CC = 3.6V
CC = 3.6V
Active Current, Program/Erase
Operation
ICC2
V
ILI
Input Load Current
Output Leakage Current
Input Low Voltage
VIN = CMOS levels
VI/O = CMOS levels
1
1
μA
μA
V
ILO
VIL
VIH
VOL
VOH
VCC x 0.3
Input High Voltage
Output Low Voltage
Output High Voltage
VCC x 0.7
V
IOL = 1.6mA; VCC = 2.7V
0.4
V
IOH = -100μA
VCC - 0.2V
V
Notes: 1. ICC1 during a buffer read is 20mA maximum @ 20MHz
2. All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5V tolerant
33
3596O–DFLASH–1/2013