(VDD = 10.8 V to 13.2 V, VSTBY = 3.3 V ؎ 5% or 5 V ؎ 10%, C1 = C2 = 0.1 F. All
specifications TMIN to TMAX unless otherwise noted.)
ADM2209E–SPECIFICATIONS
Parameter
Min Typ1 Max Units Test Conditions/Comments
OPERATING CONDITIONS
Operating Voltage Range, VDD
Standby Voltage Range, VSTBY
VDD Power Supply Current2
+10.8 +12 +13.2 V
+3.15
+5.5
5
V
mA
No Load, All Driver Inputs at 0.8 V or 2 V,
All Receiver Inputs at +15 V or –15 V
No Load, All Tx IN at VSTBY or Open
VSTBY Supply Current
100 200
µA
TRANSMITTER (DRIVER) CMOS INPUTS
Input Pull-Up Current
High Level Input Voltage, VINH
Low Level Input Voltage, VINL
10
25
µA
V
V
Transmitter Input at GND
2.1
0.4
TRANSMITTER (DRIVER) EIA-232 OUTPUTS
Output Voltage Swing
Output Short-Circuit Current, IOS
Output Resistance
±5.0 ±9.0
V
mA
Ω
All Transmitter Outputs Loaded with 3 kΩ to GND
VO = 0 V, VIN = 0.8 V3
VDD = 0 V, VSTBY = 0 V, VIN = ±2 V
±5
±15 ±30
300
RECEIVER EIA-232 INPUTS
Input Voltage Range
Input Low Threshold, VTL
Input High Threshold, VTH
Input Hysteresis
–15
0.4
+15
1.45
1.7 2.4
0.25
V
V
V
V
Input Resistance, RIN
3
5
7
kΩ
VIN = ±15 V
RECEIVER OUTPUTS4
High Level Output Voltage, VOH
Low Level Output Voltage, VOL
Output Leakage Current (Except R5A, R5B)
2.4
V
V
µA
IOH = –40 µA
IOL = +1.6 mA
VDD = 0 V
0.2 0.4
0.05 ±5
DRIVER SWITCHING CHARACTERISTICS5
Maximum Data Rate
460
460
kbps
kbps
RL = 3 kΩ to 7 kΩ, CL = 50 pF to 470 pF
RL = 3 kΩ to 7 kΩ, CL = 50 pF to 1000 pF,
TA = 0°C to +85°C, 5 V ± 10% Only
RL = 3 kΩ to 7 kΩ, CL = 50 pF to 470 pF,
VSTBY = 5 V ± 5%, VDD = 12 V ± 5%
RL = 3 kΩ, CL = 1000 pF (Figures 1 and 2)
RL = 3 kΩ, CL = 1000 pF (Figures 1 and 2)
RL = 3 kΩ to 7 kΩ, CL = 50 pF to 470 pF
RL = 3 kΩ to 7 kΩ, CL = 50 pF to 1000 pF,
VSTBY = 5 V ± 10% Only. Measured from +3 V
to –3 V or Vice Versa
920
kbps
Propagation Delay, High to Low, TPHL
Propagation Delay, Low to High, TPLH
Transition Region Slew Rate
1
1
16
16
µs
µs
V/µs
V/µs
6
4
Transition Region Slew Rate (5 V)
RECEIVER SWITCHING CHARACTERISTICS
Maximum Data Rate
920
460
kbps
kbps
CL = 150 pF, VSTBY = 5 V ± 5% Only
CL = 150 pF
Propagation Delay, R1–R4
Propagation Delay, R5
Output Rise Time, tr
Output Fall Time, tf
0.4 0.75 µs
CL = 150 pF
CL = 150 pF
Figures 3 and 4
1
2
µs
ns
ns
30
30
ESD AND EMC
ESD Protection (I-O Pins)
±15
±15
±8
±2.5
±2
kV
kV
kV
kV
kV
V/m
Human Body Model
IEC1000-4-2 Air Discharge
IEC1000-4-2 Contact Discharge
Human Body Model, MIL-STD-883B
IEC1000-4-4
ESD Protection (All Other Pins)
EFT Protection (I-O Pins)
EMI Immunity
10
IEC1000-4-3
NOTES
1All typicals are given for VDD = +12 V, VSTBY = 5 V, TA = +25°C.
2Current into device pins is defined as positive. Current out-of-device pins is defined as negative. All voltages are referred to ground unless otherwise specified. For
current, minimum and maximum values are specified as an absolute value and the sign is used to indicate direction. For voltage logic levels, the more positive value is
designated as maximum. For example, if –6 V is a maximum, the typical value (–6.8 V) is more negative.
3Only one driver output shorted at a time.
4If receiver inputs are unconnected, receiver output is a logic high.
5Refer to typical curves. Driver output slew rate is measured from the +3.0 V to the –3.0 V level on the output waveform. Slew rate is determined by load capacitance.
Specifications subject to change without notice.
–2–
REV. 0
ADI [ ADI ]
