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ADM1032AR 参数 Datasheet PDF下载

ADM1032AR图片预览
型号: ADM1032AR
PDF下载: 下载PDF文件 查看货源
内容描述: + -1C远程和本地系统温度监控器 [+-1C Remote and Local System Temperature Monitor]
分类和应用: 监控
文件页数/大小: 12 页 / 166 K
品牌: ADI [ ADI ]
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ADM1032  
temperature change. In the case of the remote sensor this should  
not be a problem, as it will either be a substrate transistor in the  
processor, or can be a small package device such as SOT-23  
placed in close proximity to it.  
A
PPLICATIONS INFORMATION  
FACTORS AFFECTING ACCURACY  
Remote Sensing Diode  
The ADM1032 is designed to work with substrate transistors  
built into processors’ CPUs or with discrete transistors. Sub-  
strate transistors will generally be PNP types with the collector  
connected to the substrate. Discrete types can be either PNP or  
NPN transistor connected as a diode (base shorted to collector).  
If an NPN transistor is used, the collector and base are connected  
to D+ and the emitter to D–. If a PNP transistor is used, the  
collector and base are connected to D– and the emitter to D+.  
Substrate transistors are found in a number of CPUs. To reduce  
the error due to variations in these substrate and discrete  
transistors, a number of factors should be taken into consideration:  
The on-chip sensor, however, will often be remote from the  
processor, and will only be monitoring the general ambient  
temperature around the package. The thermal time constant of  
the SO-8 package in still air is about 140 seconds, and if the ambient  
air temperature quickly changed by 100 degrees, it would take about  
12 minutes (5 time constants) for the junction temperature of the  
ADM1032 to settle within 1 degree of this. In practice, the ADM1032  
package will be in electrical, and hence thermal, contact with a printed  
circuit board, and may also be in a forced airflow. How accurately  
the temperature of the board and/or the forced airflow reflect the  
temperature to be measured will also affect the accuracy.  
1. The ideality factor, nf, of the transistor. The ideality factor is  
a measure of the deviation of the thermal diode from ideal  
behavior. The ADM1032 is trimmed for an nf value of 1.008.  
The following equation may be used to calculate the error  
introduced at a temperature T°C when using a transistor  
whose nf does not equal 1.008. Consult the processor  
datasheet for nf values.  
Self-heating due to the power dissipated in the ADM1032 or the  
remote sensor, causes the chip temperature of the device or remote  
sensor to rise above ambient. However, the current forced through  
the remote sensor is so small that self-heating is negligible. In  
the case of the ADM1032, the worst-case condition occurs when  
the device is converting at 16 conversions per second while sinking  
the maximum current of 1 mA at the ALERT and THERM  
output. In this case, the total power dissipation in the device is  
about 11 mW. The thermal resistance, θJA, of the SO-8 package  
is about 121°C/W.  
n
1.008  
(
)
natural  
T =  
× 273.15 Kelvin +T  
(
)
1.008  
This value can be written to the offset register and is automati-  
cally added to or subtracted from the temperature measurement.  
In practice, the package will have electrical and hence thermal  
connection to the printed circuit board, so the temperature rise  
due to self-heating will be negligible.  
2. Some CPU manufacturers specify the high and low current  
levels of the substrate transistors. The high current level of  
the ADM1032, IHIGH, is 230 A and the low level current,  
LAYOUT CONSIDERATIONS  
I
LOW, is 13 A. If the ADM1032 current levels do not match  
Digital boards can be electrically noisy environments, and the  
ADM1032 is measuring very small voltages from the remote  
sensor, so care must be taken to minimize noise induced at the  
sensor inputs. The following precautions should be taken:  
the levels of the CPU manufacturers, then it may become  
necessary to remove an offset. The CPUs datasheet will  
advise whether this offset needs to be removed and how to  
calculate it. This offset may be programmed to the offset  
register. It is important to note that if accounting for two or  
more offsets is needed, then the algebraic sum of these offsets  
must be programmed to the Offset Register.  
1. Place the ADM1032 as close as possible to the remote sensing  
diode. Provided that the worst noise sources, i.e., clock gen-  
erators, data/address buses, and CRTs, are avoided, this distance  
can be 4 to 8 inches.  
If a discrete transistor is being used with the ADM1032 the best  
accuracy will be obtained by choosing devices according to the  
following criteria:  
2. Route the D+ and Dtracks close together, in parallel, with  
grounded guard tracks on each side. Provide a ground plane  
under the tracks if possible.  
Base-emitter voltage greater than 0.25 V at 6 mA, at the highest  
operating temperature.  
3. Use wide tracks to minimize inductance and reduce noise  
pickup. 10 mil track minimum width and spacing is  
recommended.  
Base-emitter voltage less than 0.95 V at 100 mA, at the lowest  
operating temperature.  
Base resistance less than 100 .  
10MIL  
10MIL  
10MIL  
10MIL  
10MIL  
10MIL  
10MIL  
GND  
D+  
Small variation in hFE (say 50 to 150) that indicates tight  
control of VBE characteristics.  
Transistors such as 2N3904, 2N3906, or equivalents in SOT-23  
packages are suitable devices to use.  
D–  
THERMAL INERTIA AND SELF-HEATING  
Accuracy depends on the temperature of the remote-sensing  
diode and/or the internal temperature sensor being at the same  
temperature as that being measured, and a number of factors  
can affect this. Ideally, the sensor should be in good thermal  
contact with the part of the system being measured, for example  
the processor. If it is not, the thermal inertia caused by the mass  
of the sensor will cause a lag in the response of the sensor to a  
GND  
Figure 6. Arrangement of Signal Tracks  
4. Try to minimize the number of copper/solder joints, which  
can cause thermocouple effects. Where copper/solder joints  
are used, make sure that they are in both the D+ and Dpath  
and at the same temperature.  
REV. 0  
–11–