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ADG736BRMZ-REEL 参数 Datasheet PDF下载

ADG736BRMZ-REEL图片预览
型号: ADG736BRMZ-REEL
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS低压2.51 ©双路SPDT开关 [CMOS Low Voltage 2.5 Ω Dual SPDT Switch]
分类和应用: 开关光电二极管
文件页数/大小: 12 页 / 250 K
品牌: AD [ ANALOG DEVICES ]
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Data Sheet
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.
Table 1.
B Version
−40°C
to
−40°C
to
+85°C
+125°C
0 V to V
DD
2.5
4
On Resistance Match Between Channels (∆R
ON
)
On Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(Off )
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
0.1
0.4
0.5
1.2
±0.01
±0.01
2.4
0.8
0.005
± 0.1
12
16
5
8
7
1
–62
–82
–62
–82
200
9
32
0.001
1.0
1
ADG736
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
25°C
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
µA typ
µA max
ns typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
DS
= −10 mA;
see Figure
V
S
= 0 V to V
DD
, I
DS
= −10 mA
V
S
= 0 V to V
DD
, I
DS
= −10 mA
V
DD
= 5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
see Figure
V
S
= V
D
= 1 V or 4.5 V; see Figure
4.5
7
0.4
1.5
1
5
2.4
0.8
± 0.1
V
IN
= V
INL
or V
INH
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 3 V; see Figure
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 16
R
L
= 50 Ω, C
L
= 5 pF; see Figure
16
8
1
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
Channel-to-Channel Crosstalk
Bandwidth (–3 dB)
C
S
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
Guaranteed by design; not subject to production test.
V
DD
= 5.5 V
Digital inputs = 0 V or 5 V
1.0
Rev. D | Page 3 of 12