AD8551/AD8552/AD8554
(V = +2.7 V, VCM = +1.35 V, VO = +1.35 V, TA = +25؇C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
S
Parameter
Symbol
Conditions
Min
Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
VOS
IB
1
5
µV
µV
pA
nA
pA
pA
V
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
10
50
1.5
50
200
2.7
Input Bias Current
Input Offset Current
10
1.0
10
IOS
150
Input Voltage Range
0
Common-Mode Rejection Ratio
CMRR
AVO
VCM = 0 V to +2.7 V
–40°C ≤ TA ≤ +125°C
RL = 10 kΩ, VO = +0.3 V to +2.4 V
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
115
110
110
105
130
130
140
130
dB
dB
dB
dB
µV/°C
Large Signal Voltage Gain1
Offset Voltage Drift
∆VOS/∆T
0.005 0.04
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 kΩ to GND
–40°C to +125°C
RL = 10 kΩ to GND
–40°C to +125°C
RL = 100 kΩ to V+
–40°C to +125°C
RL = 10 kΩ to V+
–40°C to +125°C
2.685 2.697
2.685 2.696
V
V
V
V
mV
mV
mV
mV
mA
mA
mA
mA
2.67
2.67
2.68
2.675
1
Output Voltage Low
VOL
10
10
20
20
2
10
15
Short Circuit Limit
Output Current
ISC
IO
±10
±15
±10
±10
±5
–40°C to +125°C
–40°C to +125°C
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = +2.7 V to +5.5 V
–40°C ≤ TA ≤ +125°C
VO = 0 V
120
115
130
130
750
950
dB
dB
µA
µA
Supply Current/Amplifier
900
1,000
–40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Overload Recovery Time
Gain Bandwidth Product
SR
RL = 10 kΩ
0.5
0.05
1
V/µs
ms
MHz
GBP
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
0 Hz to 10 Hz
f = 1 kHz
f = 10 Hz
1.6
75
2
µV p-p
nV/√Hz
fA/√Hz
NOTE
1Gain testing is highly dependent upon test bandwidth.
Specifications subject to change without notice.
REV. 0
–3–
ADI [ ADI ]
