AD8551/AD8552/AD8554–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (VS = +5 V, VCM = +2.5 V, VO = +2.5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
VOS
IB
1
5
µV
µV
pA
nA
pA
pA
V
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
10
50
1.5
70
200
5
Input Bias Current
Input Offset Current
10
1.0
20
IOS
150
Input Voltage Range
0
Common-Mode Rejection Ratio
CMRR
AVO
VCM = 0 V to +5 V
120
115
125
120
140
130
145
135
dB
dB
dB
dB
µV/°C
–40°C ≤ TA ≤ +125°C
RL = 10 kΩ, VO = +0.3 V to +4.7 V
–40°C ≤ TA ≤ +125°C
–40°C ≤ TA ≤ +125°C
Large Signal Voltage Gain1
Offset Voltage Drift
∆VOS/∆T
0.005 0.04
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 kΩ to GND
–40°C to +125°C
RL = 10 kΩ to GND
–40°C to +125°C
RL = 100 kΩ to V+
–40°C to +125°C
RL = 10 kΩ to V+
–40°C to +125°C
4.99
4.99
4.95
4.95
4.998
4.997
4.98
4.975
1
2
10
15
±50
±40
±30
±15
V
V
V
V
mV
mV
mV
mV
mA
mA
mA
mA
Output Voltage Low
VOL
10
10
30
30
Short Circuit Limit
Output Current
ISC
IO
±25
–40°C to +125°C
–40°C to +125°C
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = +2.7 V to +5.5 V
–40°C ≤ TA ≤ +125°C
VO = 0 V
120
115
130
130
850
dB
dB
µA
µA
Supply Current/Amplifier
975
–40°C ≤ TA ≤ +125°C
1,000 1,075
DYNAMIC PERFORMANCE
Slew Rate
Overload Recovery Time
Gain Bandwidth Product
SR
RL = 10 kΩ
0.4
0.05 0.3
1.5
V/µs
ms
MHz
GBP
NOISE PERFORMANCE
Voltage Noise
en p-p
en p-p
en
0 Hz to 10 Hz
0 Hz to 1 Hz
f = 1 kHz
1.0
0.32
42
µV p-p
µV p-p
nV/√Hz
fA/√Hz
Voltage Noise Density
Current Noise Density
in
f = 10 Hz
2
NOTE
1Gain testing is highly dependent upon test bandwidth.
Specifications subject to change without notice.
–2–
REV. 0
ADI [ ADI ]
