AD817
AD 817A
Typ
P aram eter
Conditions
VS
Min
Max
Units
INPUT COMMON-MODE
VOLT AGE RANGE
±5 V
+3.8
–2.7
+13
–12
+3.8
+1.2
+4.3
–3.4
+14.3
–13.4
+4.3
+0.9
V
V
V
V
V
V
±15 V
0, +5 V
OUT PUT VOLT AGE SWING
RLOAD = 500 Ω
RLOAD = 150 Ω
RLOAD = 1 kΩ
RLOAD = 500 Ω
RLOAD = 500 Ω
±5 V
±5 V
±15 V
±15 V
0, +5 V
3.3
3.2
3.8
3.6
13.7
13.4
±V
±V
±V
±V
13.3
12.8
+1.5,
+3.5
50
V
Output Current
±15 V
±5 V
0, +5 V
±15 V
mA
mA
mA
mA
50
30
Short-Circuit Current
INPUT RESIST ANCE
INPUT CAPACIT ANCE
OUT PUT RESIST ANCE
90
300
1.5
8
kΩ
pF
Ω
Open Loop
POWER SUPPLY
Operating Range
Dual Supply
Single Supply
±2.5
+5
±18
+36
7.5
7.5
7.5
7.5
V
V
mA
mA
mA
mA
Quiescent Current
±5 V
±5 V
±15 V
±15 V
7.0
7.0
T MIN to TMAX
T MIN to TMAX
NOT ES
1Full power bandwidth = slew rate/2 π VPEAK
.
Specifications subject to change without notice.
ABSO LUTE MAXIMUM RATINGS1
2.0
1.5
1.0
0.5
0
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
8-PIN MINI-DIP PACKAGE
T
= +150°C
J
Internal Power Dissipation2
Plastic (N) . . . . . . . . . . . . . . . . . . . . . . See Derating Curves
Small Outline (R) . . . . . . . . . . . . . . . . . See Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . ±6 V
Output Short Circuit Duration . . . . . . . . See Derating Curves
Storage T emperature Range N, R . . . . . . . . . –65°C to +125°C
Operating T emperature Range . . . . . . . . . . . . –40°C to +85°C
Lead T emperature Range (Soldering 10 sec) . . . . . . . . +300°C
8-PIN SOIC PACKAGE
NOT ES
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. T his is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Specification is for device in free air: 8-pin plastic package: θJA = 100°C/watt;
8-pin SOIC package: θJA = 160°C/watt.
–50 –40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE –
°C
Maxim um Power Dissipation vs. Tem perature
CAUTIO N
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD817 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. B
–3–