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AD7569JP 参数 Datasheet PDF下载

AD7569JP图片预览
型号: AD7569JP
PDF下载: 下载PDF文件 查看货源
内容描述: LC2MOS完成, 8位模拟I / O系统 [LC2MOS Complete, 8-Bit Analog I/0 Systems]
分类和应用:
文件页数/大小: 20 页 / 505 K
品牌: ADI [ ADI ]
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AD7569/AD7669–TIMING CHARACTERISTICS1  
(See Figures 8, 10, 12; VDD = 5 V ؎ 5%; VSS = 0 V or –5 V ؎ 5%)  
Limit at  
Limit at  
Limit at  
25؇C (All Grades)  
TMIN, TMAX  
(J, K, A, B Grades)  
TMIN, TMAX  
(S, T Grades)  
Parameter  
Units  
Test Conditions/Comments  
DAC Timing  
t1  
t2  
t3  
t4  
t5  
80  
0
0
60  
10  
80  
0
0
70  
10  
90  
0
0
80  
10  
ns min  
ns min  
ns min  
ns min  
ns min  
WR Pulse Width  
CS, A/B to WR Setup Time  
CS, A/B to WR Hold Time  
Data Valid to WR Setup Time  
Data Valid to WR Hold Time  
ADC Timing  
t6  
t7  
t8  
t9  
50  
110  
20  
0
0
60  
0
60  
95  
10  
60  
65  
120  
60  
90  
50  
130  
30  
0
0
75  
0
75  
120  
10  
75  
75  
140  
75  
115  
50  
150  
30  
0
0
90  
0
90  
135  
10  
85  
85  
160  
90  
135  
ns min  
ns max  
ns max  
ns min  
ns min  
ns min  
ns min  
ns max  
ns max  
ns min  
ns max  
ns max  
ns max  
ns max  
ns max  
ST Pulse Width  
ST to BUSY Delay  
BUSY to INT Delay  
BUSY to CS Delay  
CS to RD Setup Time  
RD Pulse Width Determined by t13.  
CS to RD Hold Time  
Data Access Time after RD; CL = 20 pF  
Data Access Time after RD; CL = 100 pF  
Bus Relinquish Time after RD  
t10  
t11  
t12  
2
t13  
3
t14  
t15  
t16  
t17  
RD to INT Delay  
RD to BUSY Delay  
Data Valid Time after BUSY; CL = 20 pF  
Data Valid Time after BUSY; CL = 100 pF  
2
NOTES  
1Sample tested at +25°C to ensure compliance. All input control signals are specified with tR = tF = 5 ns (10% to 90% of +5 V) and timed from a voltage level of 1.6 V.  
2t13 and t17 are measured with the load circuits of Figure 1 and defined as the time required for an output to cross either 0.8 V or 2.4 V.  
3tl4 is defined as the time required for the data line to change 0.5 V when loaded with the circuit of Figure 2.  
Specifications subject to change without notice.  
a. High-Z to VOH  
b. High-Z to VOL  
a. VOH to High-Z  
b. VOL to High-Z  
Figure 1. Load Circuits for Data Access Time Test  
Figure 2. Load Circuits for Bus Relinquish Time Test  
ABSOLUTE MAXIMUM RATINGS  
VDD to AGNDDAC or AGNDADC . . . . . . . . . . . . . –0.3 V, +7 V  
Power Dissipation (Any Package) to +75°C . . . . . . . . 450 mW  
Derates above 75°C by . . . . . . . . . . . . . . . . . . . . . 6 mW/°C  
Operating Temperature Range  
Commercial (J, K) . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C  
Industrial (A, B) . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C  
Extended (S, T) . . . . . . . . . . . . . . . . . . . . –55°C to +125°C  
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C  
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . +300°C  
*Stresses above those listed under “Absolute Maximum Ratings” may cause  
permanent damage to the device. This is a stress rating only; functional operation  
of the device at these or any other condition above those indicated in the  
operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect device reliability.  
V
V
DD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V  
DD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +14 V  
AGNDDAC or AGNDADC to DGND . . . . –0.3 V, VDD + 0.3 V  
AGNDDAC to AGNDADC . . . . . . . . . . . . . . . . . . . . . . . . . ±5 V  
Logic Voltage to DGND . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V  
CLK Input Voltage to DGND . . . . . . . . . –0.3 V, VDD + 0.3 V  
V
OUT (VOUTA, VOUTB) to  
AGND1  
. . . . . . . . . . . . . . . . . VSS – 0.3 V, VDD + 0.3 V  
DAC  
V
IN to AGNDADC . . . . . . . . . . . . . . . VSS – 0.3 V, VDD + 0.3 V  
NOTE  
1Output may be shorted to any voltage in the range VSS to VDD provided that the  
power dissipation of the package is not exceeded. Typical short circuit current for  
a short to AGND or VSS is 50 mA.  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the AD7569/AD7669 features proprietary ESD protection circuitry, permanent dam-  
age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper  
ESD precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
–4–  
REV. B  
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