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5962-8951801RA 参数 Datasheet PDF下载

5962-8951801RA图片预览
型号: 5962-8951801RA
PDF下载: 下载PDF文件 查看货源
内容描述: [High Speed, µP-Compatible, CMOS, 8-Bit Sampling ADC]
分类和应用: 转换器
文件页数/大小: 16 页 / 290 K
品牌: ADI [ ADI ]
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AD7821  
ABSOLUTE MAXIMUM RATINGS*  
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C  
Extended (T Version) . . . . . . . . . . . . . . . –55°C to +125°C  
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C  
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . .+300°C  
Power Dissipation (Any Package) to +75°C . . . . . . . 450 mW  
Derates above +75°C by . . . . . . . . . . . . . . . . . . . . . 6 mW/°C  
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, + 7 V  
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V, + 7 V  
Digital Input Voltage to GND  
(Pins 6–8, 13) . . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V  
Digital Output Voltage to GND  
(Pins 2–5, 9, 14–18) . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V  
VREF(+) to GND . . . . . . . . . . . . . . . VSS – 0.3 V, VDD + 0.3 V  
VREF(–) to GND . . . . . . . . . . . . . . . VSS – 0.3 V, VDD + 0.3 V  
VIN to GND . . . . . . . . . . . . . . . . . . . VSS – 0.3 V, VDD + 0.3 V  
Operating Temperature Range  
*Stresses above those listed under “Absolute Maximum Ratings” may cause  
permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in the  
operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect device reliability.  
Commercial (K Version) . . . . . . . . . . . . . . –40°C to +85°C  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the AD7821 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD  
precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
PIN CONFIGURATIONS  
DIP AND SOIC  
LCCC  
PLCC  
PIN FUNCTION DESCRIPTIONS  
Pin  
Mnemonic Description  
1
2
VIN  
DB0  
Analog Input: Range VREF(–) VIN VREF(+)  
Three-State Data Output (LSB)  
3–5  
6
7
DB1–DB3  
WR/RDY  
MODE  
Three-State Data Outputs  
WRITE control input/READY status output. See Digital Interface section.  
Mode Selection Input. It determines whether the device operates in the WR-RD or RD mode. This input is internally  
pulled low through a 50 µA current source. See Digital Interface section.  
8
9
RD  
INT  
READ Input. RD must be low to access data from the part. See Digital Interface section.  
INTERRUPT Output. INT going low indicates that the conversion is complete. INT returns high on the rising  
edge of CS or RD. See Digital Interface section.  
10  
11  
GND  
Ground  
V
REF(–)  
Lower limit of reference span.  
Range: VSS VREF(–) VREF(+).  
12  
V
REF(+)  
Upper limit of reference span.  
Range: VREF(–) < VREF(+) VDD  
.
13  
14–16  
17  
CS  
DB4–DB6  
DB7  
Chip Select Input. The device is selected when this input is low.  
Three-State Data Outputs  
Three-State Data Output (MSB)  
18  
OFL  
Overflow Output. If the analog input is higher than (VREF(+) – 1/2 LSB), OFL will be low at the end of conversion. It  
is a non-three-state output which can be used to cascade two or more devices to increase resolution.  
19  
20  
VSS  
Negative Supply Voltage  
V
V
SS = 0 V; Unipolar Operation  
SS = –5 V; Bipolar Operation  
VDD  
Positive Supply Voltage, +5 V  
–4–  
REV. B