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5962-88565022A 参数 Datasheet PDF下载

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型号: 5962-88565022A
PDF下载: 下载PDF文件 查看货源
内容描述: 微型电路,线性,抗辐射,噪音低,四路运算放大器,单片硅 [MICROCIRCUIT, LINEAR, RADIATION HARDENED, LOW NOISE, QUAD OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON]
分类和应用: 运算放大器
文件页数/大小: 13 页 / 61 K
品牌: ADI [ ADI ]
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TABLE I. Electrical performance characteristics – Continued.  
Conditions 1/ 2/  
-55°C TA +125°C  
unless otherwise specified  
Group A  
subgroups  
Device  
type  
Limits  
Max  
Unit  
Test  
Symbol  
Min  
350  
Large-signal voltage gain  
AVS  
4
02  
V/mV  
VO = ±10 V,  
RL = 2 k3/  
5, 6  
4, 5, 6  
1, 2, 3  
1
250  
Output voltage swing  
Supply current 4/  
VOP  
IS  
All  
All  
V
RL = 2 k3/  
No load  
±12  
11  
11  
mA  
M,D,P,L,R  
Slew rate  
SR  
7
01  
1.4  
AVCL = +21, RL = 10 k,  
V/µs  
TA = +25°C 3/  
02  
01  
6.5  
Common-mode rejection  
CMR  
1
2, 3  
1
110  
100  
105  
100  
dB  
VCM = IVR = ±11 V 3/ 5/  
02  
01  
02  
2, 3  
1
Power supply rejection ratio PSRR  
1.8  
5.6  
5.6  
10  
VCC = ±4.5 V to ±18 V 3/  
µV/V  
2, 3  
1
2, 3  
1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. However, this  
device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in table I.  
When performing post irradiation electrical measurements for any RHA level, TA = +25°C. VCC = ±15 V, RS = 50 .  
2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.  
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method  
1019, condition A.  
3/ This parameter is not tested post-irradiation.  
4/ IS limit equals the total of all amplifiers.  
5/ IVR is defined as the VCM range used for the CMR test.  
SIZE  
STANDARD  
5962-88565  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
F
SHEET  
6
DSCC FORM 2234  
APR 97