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5962-88565022A 参数 Datasheet PDF下载

5962-88565022A图片预览
型号: 5962-88565022A
PDF下载: 下载PDF文件 查看货源
内容描述: 微型电路,线性,抗辐射,噪音低,四路运算放大器,单片硅 [MICROCIRCUIT, LINEAR, RADIATION HARDENED, LOW NOISE, QUAD OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON]
分类和应用: 运算放大器
文件页数/大小: 13 页 / 61 K
品牌: ADI [ ADI ]
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1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:  
Outline letter  
Descriptive designator  
Terminals  
Package style  
C
D
2
3
K
GDIP1-T14 or CDIP2-T14  
GDFP1-F14 or CDFP2-F14  
CQCC1-N20  
CQCC1-N28  
GDFP2-F24 or CDFP3-F24  
14  
14  
20  
28  
24  
Dual-in-line  
Flat pack  
Square leadless chip carrier  
Square leadless chip carrier  
Flat pack  
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,  
appendix A for device class M.  
1.3 Absolute maximum ratings. 1/  
Supply voltage (VCC) ....................................................... ±18 V dc  
Differential input voltage .................................................. ±1 V dc 2/  
Differential input current .................................................. ±25 mA 2/  
Input voltage .................................................................... Supply voltage  
Output short circuit duration ............................................ Continuous  
Storage temperature range ............................................. -65°C to +150°C  
Lead temperature (soldering, 60 seconds) ..................... +300°C  
Power dissipation (PD):  
Cases C and 2 ............................................................. 800 mW  
Case D ......................................................................... 550 mW  
Case 3 ......................................................................... 500 mW  
Case K ......................................................................... 440 mW  
Maximum junction temperature (TJ) ................................ +150°C  
Thermal resistance, junction-to-case (θJC) ...................... See MIL-STD-1835  
Thermal resistance, junction-to-ambient (θJA):  
Cases C and 2 ............................................................. 100°C/W  
Case D ......................................................................... 140°C/W  
Case 3 ......................................................................... 110°C/W  
Case K ......................................................................... 69°C/W  
1.4 Recommended operating conditions.  
Ambient operating temperature range (TA) ..................... -55°C to +125°C  
Supply voltage (VCC) ....................................................... ±15 V  
1.5 Radiation features.  
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)................. 100 Krads(Si) 3/  
2. APPLICABLE DOCUMENTS  
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a  
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in  
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the  
solicitation.  
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the  
maximum levels may degrade performance and affect reliability.  
2/ The inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise  
performance. If the differential input voltage exceeds ±1 V, the input current should be limited to ±25 mA.  
3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.  
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method  
1019, condition A.  
SIZE  
STANDARD  
5962-88565  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
F
SHEET  
3
DSCC FORM 2234  
APR 97