ACT81460
Rev 1.0, 18-Dec-2018
GPIO ELECTRICAL CHARACTERISTICS
(VIO_IN = 1.8V, TA = 25°C, unless otherwise specified.)
PARAMETER
GPIO1,2,3,4 Input Low
GPIO1,2,3,4 Input High
GPIO1,2,3,4 Input Low
GPIO1,2,3,4 Input High
TEST CONDITIONS
MIN
1.35
2.4
TYP
MAX
UNIT
VIO_IN = 1.8V
VIO_IN = 1.8V
VIO_IN = 3.3V
VIO_IN = 3.3V
0.4
V
V
V
V
1.2
GPIO Open Drain Leakage Cur-
rent
Output = 5V
1
µA
GPIO Open Drain Output Low
Output Low
IOL = 1mA
0.35
0.35
V
V
IOL = 0.25mA, CMOS output configuration.
VIO_IN-
0.35
Output High
IOH = 0.25mA, CMOS output configuration.
V
VIO_IN Operating Range
PBIN Deglitch Time
1.2
VSYS
3999
V
1kΩ/50kΩ Ohm Pull down on PB pin
1kΩ Ohm Pull down on PB pin
32
ms
ms
PBIN Soft Reset Time
2000
4000
PBIN Power Cycle/ Hard Reset
Time
1kΩ Ohm Pull down on PB pin
ms
ms
ms
ms
PBIN Programmable Turn on
Time Range
Configurable to 32ms, 500ms, 1000ms or 2000ms
32
2000
Configured as power cycle / hard reset with long PB
press. (50k Ohm Pull Down)
PBIN Power Cycle Time
PBIN Turn Off Time
10000
14000
Configured as power off with long PB press. (50kΩ
Ohm Pull Down, can disable)
PBIN Master Reset Rising Thresh-
old
PBIN rising
1.25
0.5
V
PBIN Internal pull up resistance
Pull up to internal supply VSYS
MΩ
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Copyright © 2018 Active-Semi, Inc.
24
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