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AFS090-1FGG256I 参数 Datasheet PDF下载

AFS090-1FGG256I图片预览
型号: AFS090-1FGG256I
PDF下载: 下载PDF文件 查看货源
内容描述: Actel的Fusion混合信号FPGA [Actel Fusion Mixed-Signal FPGAs]
分类和应用: 现场可编程门阵列可编程逻辑时钟
文件页数/大小: 318 页 / 10484 K
品牌: ACTEL [ Actel Corporation ]
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Device Architecture  
Gate Driver  
The Fusion Analog Quad includes a Gate Driver connected to the Quad's AG pin (Figure 2-74).  
Designed to work with external p- or n-channel MOSFETs, the Gate driver is a configurable current  
sink or source and requires an external pull-up or pull-down resistor. The AG supports 4 selectable  
gate drive levels: 1 µA, 3 µA, 10 µA, and 30 µA (Figure 2-75 on page 2-95). The AG also supports a  
High Current Drive mode in which it can sink 20 mA; in this mode the switching rate is  
approximately 1.3 MHz with 100 ns turn-on time and 600 ns turn-off time. Modeled on an open-  
drain-style output, it does not output a voltage level without an appropriate pull-up or pull-down  
resistor. If 1 V is forced on the drain, the current sinking/sourcing will exceed the ability of the  
transistor, and the device could be damaged.  
The AG pad is turned on via the corresponding GDONx pin in the Analog Block macro, where x is  
the number of the corresponding Analog Quad for the AG pad to be enabled (GDON0 to GDON9).  
Power  
Line Side  
Load Side  
Off-Chip  
Rpullup  
AV  
AC  
AG  
AT  
Voltage  
Monitor Block  
Current  
Monitor Block  
Gate  
Driver  
Temperature  
Monitor Block  
Pads  
On-Chip  
Analog Quad  
Prescaler  
Prescaler  
Prescaler  
Power  
MOSFET  
Gate Driver  
Digital  
Input  
Digital  
Input  
Digital  
Input  
Current  
Monitor / Instr  
Amplifier  
Temperature  
Monitor  
To FPGA  
(DAVOUTx)  
To FPGA  
(DACOUTx)  
From FPGA  
(GDONx)  
To FPGA  
(DATOUTx)  
To Analog MUX  
To Analog MUX  
To Analog MUX  
Figure 2-74 • Gate Driver  
The gate-to-source voltage (Vgs) of the external MOSFET is limited to the programmable drive  
current times the external pull-up or pull-down resistor value (EQ 2-5).  
Vgs Ig × (Rpullup or Rpulldown  
)
EQ 2-5  
The rate at which the gate voltage of the external MOSFET slews is determined by the current, Ig,  
sourced or sunk by the AG pin and the gate-to-source capacitance, CGS, of the external MOSFET. As  
an approximation, the slew rate is given by EQ 2-6.  
dv/dt = Ig / CGS  
EQ 2-6  
2-94  
Preliminary v1.7  
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