ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
P-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Min.
Typ.
Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
V(BR)DSS
IDSS
VGS=0V, ID=-250uA
VDS=-30V, VGS=0V
VGS=±20V, VDS=0V
VGS=-10V, ID=-9.7A
VGS=-4.5V, ID=-7A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-8A
-30
V
-1
100
20
35
-2
uA
nA
IGSS
17.1
20.7
-1.2
Static Drain-Source On-Resistance
RDS(ON)
mΩ
Gate Threshold Voltage
VGS(th)
gFS
-1
V
S
V
Forward Transconductance
21.7
-0.74
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=-1A, VGS=0V
-1.0
-2.1
IS
A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
33.82
4.93
5.2
43.97
6.41
VDS=-15V, ID=-8A
VGS=-10V
nC
6.76
15.44
5.04
30.88
10.08
VDS=-15V,RGEN=6Ω,
VGS=-10V
ns
td(off)
tf
71.04 142.08
RL=15Ω
16.8
33.6
2200
325
Dynamic
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
1973
491
VDS=-15V, VGS=0V
f=1MHz
pF
Reverse Transfer Capacitance
231
Note.
4. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
5. Repetitive rating, pulse width limited by junction temperature.
6. The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2
5
ACE [ ACE TECHNOLOGY CO., LTD. ]
