ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Ordering information
ACE4614B XX + H
Halogen - free
Pb - free
FM : SOP-8
N-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Min.
Typ.
Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
V(BR)DSS
IDSS
VGS=0V, ID=250uA
VDS=30V, VGS=0V
VGS=±20V, VDS=0V
VGS=10V, ID=10A
VGS=4.5V, ID=10A
VDS=VGS, ID=250uA
VDS=5V, ID=10A
30
V
1
100
14
22
3
uA
nA
IGSS
12
16.5
2
Static Drain-Source On-Resistance
RDS(ON)
mΩ
Gate Threshold Voltage
VGS(th)
gFS
1.4
V
S
V
Forward Transconductance
20
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=1A, VGS=0V
0.74
1.0
2.6
IS
A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
7.65
2.82
2.49
13.92
2.64
31.4
3.28
9.95
3.67
3.24
27.84
5.28
62.8
6.56
VDS=15V, ID=10A
VGS=5V
nC
VDS=15V,RGEN=6Ω,
VGS=10V
ns
td(off)
tf
RL=15Ω
Dynamic
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
886.01
151
VDS=15V, VGS=0V
f=1MHz
pF
Reverse Transfer Capacitance
75.77
Note.
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE [ ACE TECHNOLOGY CO., LTD. ]
