5STP 12N8500
Triggering
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
max
Unit
Peak forward gate voltage VFGM
Peak forward gate current IFGM
Peak reverse gate voltage VRGM
12
10
10
V
A
V
Average gate power loss
Characteristic values
Parameter
PG(AV)
see Fig. 9
Symbol Conditions
typ
max
Unit
Gate-trigger voltage
VGT
IGT
Tvj = 25 °C
2.6
V
Gate-trigger current
Tvj = 25 °C
400
mA
V
Gate non-trigger voltage
Gate non-trigger current
VGD
IGD
VD = 0.4 x VDRM, Tvjmax = 90 °C
VD = 0.4 x VDRM, Tvjmax = 90°C
0.3
10
mA
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
typ
max
Unit
Operating junction
temperature range
Tvj
90
°C
Storage temperature range Tstg
Characteristic values
Parameter
-40
140
°C
Symbol Conditions
min
max
Unit
Thermal resistance junction Rth(j-c)
to case
Double-side cooled
Fm = 81...108 kN
5.7
K/kW
Rth(j-c)A Anode-side cooled
Fm = 81...108 kN
11.4
11.4
1
K/kW
K/kW
K/kW
K/kW
Rth(j-c)C Cathode-side cooled
Fm = 81...108 kN
Thermal resistance case to Rth(c-h)
heatsink
Double-side cooled
Fm = 81...108 kN
Rth(c-h)
Single-side cooled
Fm = 81...108 kN
2
Analytical function for transient thermal
impedance:
n
-t/ti
Z
(t) = R (1-e )
å
th(j-c)
th i
i=1
i
1
2
3
4
Rth i(K/kW)
3.400
0.8685
1.260
0.1572
0.680
0.0219
0.350
0.0078
ti(s)
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 3 of 6