5STP 12N8500
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
A
Average on-state current
RMS on-state current
IT(AV)M
IT(RMS)
ITSM
Half sine wave, Tc = 70°C
1200
1880
35×103
A
Peak non-repetitive surge
current
tp = 10 ms, Tvj = 90 °C,
VD = VR = 0 V
A
Limiting load integral
I2t
6.13×106 A2s
38×103
Peak non-repetitive surge
current
ITSM
tp = 8.3 ms, Tvj = 90 °C,
VD = VR = 0 V
A
Limiting load integral
Characteristic values
Parameter
I2t
5.99×106 A2s
Symbol Conditions
min
typ
max
Unit
V
On-state voltage
Threshold voltage
Slope resistance
Holding current
VT
V(T0)
rT
IT = 1500 A, Tvj = 90 °C
2
IT = 700 A - 2100 A, Tvj= 90 °C
1.25
0.48
150
125
600
800
V
mW
mA
mA
mA
mA
IH
Tvj = 25 °C
Tvj = 90 °C
Tvj = 25 °C
Tvj = 90 °C
Latching current
IL
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 90 °C,
Cont.
250
A/µs
ITRM = 2000 A,
VD £ 5360 V,
f = 50 Hz
Cont.
Critical rate of rise of on-
state current
di/dtcrit
1000
A/µs
µs
f = 1Hz
IFG = A, tr = 0.5 µs
Circuit-commutated turn-off tq
time
Tvj = 90°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1 A/µs,
600
VD £ 0.67×VDRM, dvD/dt = 20V/µs
Characteristic values
Parameter
Symbol Conditions
min
2800
typ
max
Unit
Recovery charge
Qrr
Tvj = 90°C, ITRM = A,
VR = 200 V,
3400
µAs
diT/dt = -1 A/µs
Gate turn-on delay time
tgd
3
µs
VD = 0.4×VRM, IFG = 2 A,
tr = 0.5 µs, Tvj = 25 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 2 of 6
ABB [ THE ABB GROUP ]
