5STP 04D4200
On-state characteristic model:
VT = A+ B⋅iT +C⋅ln(iT +1)+ D⋅ IT
Valid for iT = 100 – 6000 A
A
B
C
D
-5.9785e-1 1.5923e-3
4.1963e-1
-5.3599e-2
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean on-
Fig. 5 Max. permissible case temperature vs.
state current. Turn - on losses excluded.
mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1025-04 Jan. 02
page 4 of 6