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5STP04D4200 参数 Datasheet PDF下载

5STP04D4200图片预览
型号: 5STP04D4200
PDF下载: 下载PDF文件 查看货源
内容描述: 相位控制晶闸管 [Phase Control Thyristor]
分类和应用: 栅极
文件页数/大小: 6 页 / 420 K
品牌: ABB [ THE ABB GROUP ]
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5STP 04D4200  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
470  
Unit  
Max. average on-state  
ITAVM  
Half sine wave, Tc = 70°C  
A
current  
RMS on-state current  
ITRMS  
ITSM  
740  
6400  
A
A
Max. peak non-repetitive  
tp = 10 ms, Tj = 125°C,  
VD=VR = 0 V  
surge current  
Limiting load integral  
I2t  
ITSM  
204  
7000  
kA2s  
A
Max. peak non-repetitive  
tp = 8.3 ms, Tj = 125°C,  
VD=VR=0 V  
surge current  
Limiting load integral  
Characteristic values  
Parameter  
I2t  
203  
kA2s  
Symbol Conditions  
min  
typ  
max  
Unit  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
VT0  
rT  
IT = 500 A, Tj= 125°C  
IT = 300 A - 1000 A, Tj= 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
1.78  
1
1.5  
75  
60  
V
V
mΩ  
mA  
mA  
mA  
mA  
IH  
Latching current  
IL  
Tj = 25°C  
Tj = 125°C  
500  
200  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
100  
Unit  
Critical rate of rise of on-  
di/dtcrit  
Cont.  
f = 50 Hz  
Cont.  
A/µs  
A/µs  
µs  
state current  
T
j
= 125°C, ITRM = 1500 A,  
VD 0.67VDRM  
,
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
IFG = 2 A, tr = 0.5 µs  
f = 1Hz  
Circuit-commutated turn-off tq  
time  
Tj = 125°C, ITRM = 1500 A,  
VR = 200 V, diT/dt = -5 A/µs,  
600  
VD 0.67VDRM, dvD/dt = 20 V/µs,  
Characteristic values  
Parameter  
Recovery charge  
Symbol Conditions  
min  
800  
max  
2000  
Unit  
µAs  
Qrr  
Tj = 125°C, ITRM = 1500 A,  
VR = 200 V, diT/dt = -5 A/µs  
Delay time  
td  
3
µs  
VD = 0.4VDRM, IFG = 2 A, tr = 0.5 µs  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1025-04 Jan. 02  
page 2 of 6