5SNA 1600N170100
1800
1600
1400
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
1200
1000
800
E
rec
600
400
200
E
rec
[mJ] = -4 x 10
-5
x I
F2
+ 0.314 x I
F
+ 95
800
V
CC
= 900 V
R
G
= 0.82 ohm
T
vj
= 125 °C
L
σ
= 50 nH
I
rr
700
600
E
rec
[mJ], Q
rr
[µC]
500
R
G
= 0.82
Ω
R
G
= 0.56
Ω
1600
V
CC
= 900 V
I
C
= 1600 A
T
vj
= 125 °C
L
σ
= 50 nH
I
rr
1400
1200
1000
Q
rr
R
G
= 1.2
Ω
Q
rr
400
300
200
100
0
R
G
= 12
Ω
R
G
= 4.7
Ω
R
G
= 2.2
Ω
800
600
400
200
0
E
rec
0
0
1000
2000
I
F
[A]
3000
4000
0
1
2
R
G
= 6.8
Ω
3
4
5
6
7
8
9 10 11
di/dt [kA/µs]
Fig. 12
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
3200
2800
25°C
2400
125°C
2000
I
F
[A]
1600
1200
I
R
[A]
3600
3200
2800
2400
2000
1600
1200
V
CC
≤
1200 V
di/dt
≤
8 kA/µs
T
vj
= 125 °C
800
400
0
0
0.5
1
V
F
[V]
1.5
2
2.5
800
400
0
0
500
1000
V
R
[V]
1500
2000
Fig. 14
Typical diode forward characteristics,
chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 8 of 9
I
rr
[A]
ABB [ THE ABB GROUP ]
