5SNA 1600N170100
1.6
1.4
1.2
1.0
E
on
, E
off
[J]
0.8
0.6
0.4
0.2
E
sw
[mJ] = 1.63 x 10
-4
x I
C2
+0.275 x I
C
+ 258
4.0
V
CC
= 900 V
V
CEM
≤
1700 V
R
G
= 0.82 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 50 nH
E
on
, E
off
[J]
3.5
3.0
2.5
E
on
2.0
1.5
1.0
E
off
0.5
0.0
0
1000
2000
I
C
[A]
3000
4000
0
1
2
3
4
5
6
7
8
9 10 11 12 13
R
G
[ohm]
V
CC
= 900 V
V
CEM
≤
1700 V
I
C
= 1600 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 50 nH
E
off
E
on
0.0
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
V
CC
= 900 V
V
CEM
≤
1700 V
I
C
= 1600 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 50 nH
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
t
d(off)
t
d(off)
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
1
t
d(on)
t
f
0.1
t
r
V
CC
= 900 V
V
CEM
≤
1700 V
R
G
= 0.82 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 50 nH
1000
2000
I
C
[A]
3000
4000
t
d(on)
1
t
r
t
f
0.01
0
0.1
0
1
2
3
4
5
6
7
8
9 10 11 12 13
R
G
[ohm]
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1564-01 Oct 06
page 6 of 9
ABB [ THE ABB GROUP ]
