5SMY 12M1200
20
100
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
V
CC
= 600 V
15
V
CC
= 900 V
V
GE
[V]
10
C
ies
10
C [nF]
C
oes
1
5
C
res
I
C
= 150 A
T
vj
= 25 °C
0
0.0
0.2
0.4
0.6
0.8
Q
g
[µC]
1.0
1.2
1.4
0.1
0
5
10
15
20
V
CE
[V]
25
30
35
Fig. 5
Typical gate charge characteristics
Fig. 6
Typical capacitances vs
collector-emitter voltage
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
Doc. No. 5SYA1639-01 Sep 06