5SMY 12M1200
300
450
V
CE
= 20 V
400
250
350
25 °C
200
125 °C
150
300
250
200
100
150
100
50
50
V
GE
= 15 V
0
0
1
2
V
CE
[V]
3
4
0
0
2
4
6
8
10
12
14
V
GE
[V]
25 °C
125 °C
I
C
[A]
Fig. 1
Typical on-state characteristics
Fig. 2
I
C
[A]
Typical transfer characteristics
160
140
120
100
80
E
on
60
V
CC
= 600 V
R
G
= 6.8 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
, E
off
[mJ]
70
V
CC
= 600 V
I
C
= 150 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
40
60
50
E
on
, E
off
[mJ]
30
20
40
E
off
20
E
sw
[mJ] = 8.2 x E
-4
x I
C2
+ 2.65 x E
-2
x I
C
+ 7.33
E
off
10
0
0
100
200
I
C
[A]
300
400
500
0
0
10
20
30
40
50
R
G
[ohm]
Fig. 3
Typical switching characteristics vs
collector current
Fig. 4
Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1639-01 Sep 06
page 4 of 5
ABB [ THE ABB GROUP ]
