5SHX 19L6010
Thermal
Maximum rated values
Note 1
Parameter
Junction operating temperature
Storage temperature range
Ambient operational temperature
Characteristic values
Symbol
T
vj
T
stg
T
a
Conditions
min
0
-40
0
typ
max
125
60
50
Unit
°C
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
Parameter
Symbol
Thermal resistance junction-to-case
R
th(jc)
of GCT
Thermal resistance case-to-
heatsink of GCT
Thermal resistance junction-to-case
of Diode
Thermal resistance case-to-
heatsink of Diode
R
th(ch)
R
th(jc)
R
th(ch)
Conditions
Double side cooled
No heat flow between GCT
and Diode part
Double side cooled
No heat flow between GCT
and Diode part
min
typ
max
12.6
4.2
26
10.4
Analytical function for transient thermal
impedance:
Z
thJC
(t) =
GCT
i
R
i
(K/kW)
τ
i
(s)
1
8.769
0.5407
∑
i
=
1
2
1.909
n
R
i
(1 - e
- t/
τ
i
)
3
1.218
0.0091
4
0.699
0.0025
0.0792
Diode
i
R
i
(K/kW)
τ
i
(s)
1
17.057
0.5460
2
5.007
0.0829
3
2.498
0.0089
4
1.439
0.0023
Fig. 1
Transient thermal impedance (junction-to-
Note 1
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
•
•
•
calculated lifetime of on-board capacitors
20 years
with slightly forced air cooling (air velocity
> 0.5 m/s)
strong air cooling allows for increased
ambient temperature
Fig. 2
Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-02 Aug 07
page 5 of 13
ABB [ THE ABB GROUP ]
