5SHX 19L6010
GCT Data
On-state
(see Fig. 3 to 6, 23)
Maximum rated values
Note 1
Parameter
Max. average on-state
current
Max. RMS on-state current
Max. peak non-repetitive
surge on-state current
Limiting load integral
Max. peak non-repetitive
surge on-state current
Limiting load integral
Critical rate of rise of on-
state current
Characteristic values
Symbol Conditions
I
T(AV)M
Half sine wave, T
C
= 85 °C,
Double side cooled
I
T(RMS)
I
TSM
I
2
t
I
TSM
I
2
t
di
T
/dt
cr
For higher di
T
/dt and current lower
than 100 A an external retrigger
pulse is required.
t
p
= 3 ms, T
j
= 125 °C, sine wave
after surge: V
D
= V
R
= 0 V
t
p
= 10 ms, T
j
= 125 °C, sine wave
after surge: V
D
= V
R
= 0 V
min
typ
max
840
1320
18×10
3
Unit
A
A
A
6
3
1.62×10
A
2
s
A
A
2
s
A/µs
25.5×10
975×10
100
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
V
T
I
T
= 1800 A, T
j
= 125 °C
V
(T0)
r
T
T
j
= 125 °C
I
T
= 500...1800 A
min
2.75
typ
2.95
max
3.45
1.9
0.9
Unit
V
V
mΩ
Turn-on switching
Maximum rated values
Note 1
(see Fig. 23, 25)
Symbol Conditions
di
T
/dt
cr
f = 500 Hz, T
j
= 125 °C,
I
T
= 1800 A, V
D
= 3300 V
Symbol Conditions
V
D
= 3300 V, T
j
= 125 °C
t
don
I
T
= 1800 A, di/dt = V
D
/ L
i
t
don SF
L
i
= 7.6 µH
C
CL
= 10 µF, L
CL
= 0.3 µH
t
r
E
on
min
typ
max
510
Unit
A/µs
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
min
typ
max
3.5
7
1
1
Unit
µs
µs
µs
J
Turn-off switching
(see Fig. 7, 8, 23, 25)
Maximum rated values
Note 1
Parameter
Max. controllable turn-off
current
Max. controllable turn-off
current
Characteristic values
Symbol Conditions
I
TGQM
V
DM
≤
V
DRM,
T
j
= 125 °C,
V
D
= 3300 V, R
S
= 0.65
Ω,
C
CL
= 10 µF, L
CL
≤
0.3 µH
I
TGQM
V
DM
≤
V
DRM,
T
j
= 125 °C,
V
D
= 3900 V, R
S
= 0.65
Ω,
C
CL
= 10 µF, L
CL
≤
0.3 µH
min
typ
max
1800
Unit
A
900
A
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
Symbol Conditions
V
D
= 3300 V, T
j
= 125 °C
t
doff
V
DM
≤
V
DRM
, R
S
= 0.65
Ω
t
doff SF
I
TGQ
= 1800 A, L
i
= 7.6 µH
C
CL
= 10 µF, L
CL
= 0.3 µH,
E
off
min
typ
max
7
7
Unit
µs
µs
J
9
11
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-02 Aug 07
page 2 of 13
ABB [ THE ABB GROUP ]
