5SHX 03D6004
Diode Part
I
F
[A]
600
Tj = 115°C
E
rr
[J]
0.9
0.8
500
0.7
400
0.6
0.5
300
0.4
200
0.3
0.2
100
0.1
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
F
[V]
0.0
0
100
200
300
I
FQ
[A]
T
j
= 115°C
di
F
/dt = 75 A/µs
V
D
= 3300 V
Fig. 4
Diode on-state characteristics.
Fig. 5
Diode turn-off energy per pulse vs.
turn-off current.
I
rr
[A]
250
T
j
= 115°C
di
F
/dt = 75 A/µs
V
D
= 3300 V
I
FQ
[A]
300
T
j
= 0 - 115°C
di
F
/dt = 75 A/µs
V
DM
≤
V
DRM
200
200
150
100
100
50
0
0
100
200
300
I
FQ
[A]
0
0
1000
2000
3000
4000
5000
V
D
[V]
Fig. 6
Diode reverse recovery current vs.
turn-off current.
Fig. 7
Max. repetitive diode forward
current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 6 of 9
ABB [ THE ABB GROUP ]
