5SHX 03D6004
GCT Part
I
T
[A]
600
T
j
= 115°C
E
off
[J]
1.5
T
j
= 115 °C
500
400
1.0
V
D
= 3300V
300
200
0.5
100
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0
V
T
[V]
0.0
0
100
200
300
I
TGQ
[A]
Fig. 1
GCT on-state characteristics.
Fig. 2
GCT turn-off energy per pulse vs.
turn-off current.
I
TGQ
[A]
300
T
j
= 0..115 °C
V
DM
≤
V
DRM
V
RM
≤
V
RRM
200
L
i
= 44.5
µ
H
C
CL
= 0.5
µ
F
L
CL
= 1.0
µ
H
R
s
= 5.2
Ω
100
0
0
1000
2000
3000
4000
5000
V
D
[V]
Fig. 3
Max. repetitive GCT turn-off current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 5 of 9