5SGA 40L4501
Fig. 19
Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage
V
R
may exceed the rate value V
RRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : V
GR
=
10… 15 V.
Related documents:
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Cosmic Ray
Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory
Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact
factory
Please refer to http://www.abb.com/semiconductors for actual versions.
5SYA 2036
5SYA 2046
5SZK 9104
5SZK 9105
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
Doc. No. 5SYA1208-02 March 05
ABB [ THE ABB GROUP ]
