5SGA 40L4501
E
off
[J]
18
16
14
12
10
8
6
Q
GQa
4
2
0
0
500
1000
1500
2000
2500
3000
3500
�½ V
DRM
4000
2000
0
Conditions:
V
D
= �½⋅V
DRM
di
GQ
/dt = 40 A/
µ
s
C
S
= 6
µF,
R
S
= 5
Ω
T
j
= 125°C
Q
GQa
[A]
18000
16000
E
off
[J]
14
12
10
8
6
4
2
0
0
500
1000
1500
2000
2500
3000
3500
4000
I
TGQ
[A]
Conditions:
V
D
= �½ V
DRM
, V
DM
= V
DRM
di
GQ
/dt =40 A/µs
R
S
= 5
Ω
T
j
= 125 °C
V
DM
= V
DRM
14000
12000
10000
C
S
= 6
µ
F
¾ V
DRM
8000
6000
4000
I
TGQ
[A]
Fig. 12
Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage, extracted gate
charge vs. turn-off current
C
s
[
µ
F]
6
Condition:
V
D
= �½
⋅
V
DRM
, V
DM
= V
DRM
di
GQ
/dt = 40 A/
µ
s
R
S
= 5
Ω
, LS
≤
300 nH
Fig. 13
Turn-off energy per pulse vs. turn-off current
and snubber capacitance
E
off
[J],t
s
[
µ
s]
22
20
18
16
14
12
55
50
45
40
35
30
25
20
15
10
5
0
-10 0
Condition:
V = �½ V
DRM
, V
DM
= V
DRM
D
I
GQ
= 4000 A, di
Q
/dt = 40 A/
µ
s
T
G
Tj = 125 °C
I
GQM
[A]
1100
I
GQM
1000
900
800
700
E
off
600
500
5
4
3
10
8
6
t
S
400
300
200
100
2
4
2
1
1000
1500
2000
2500
3000
3500
4000
I
GQM
[A]
0
10
20
25
30
40 50
60
70
75
80
0
90
100
110 120
125
T
j
[°C]
Fig. 14
Required snubber capacitor vs. max
allowable turn-off current
Fig. 15
Turn-off energy per pulse, storage time and
peak turn-off gate current vs. junction
temperature
I
GQM
[A]
t
s
[s]
60
55
50
45
40
35
30
25
20
15
10
5
0
0
10
20
30
40
50
Conditions:
I
TGQ
= 3000 A
T
j
= 125 °C
t
s
[s]
60
I
GQM
[A]
1200
I
GQM
1200
1000
50
I
GQM
1000
800
40
800
t
S
600
30
t
S
600
400
20
Conditions:
di
GQ
/dt =40 A/µs
T
j
= 125 °C
400
200
10
200
0
60
di
GQ
/dt [A/µs]
0
0
500
1000
1500
2000
2500
3000
3500
0
4000
I
TGQ
[A]
Fig. 16
Storage time and peak turn-off gate current
vs. neg. gate current rise rate
Fig. 17
Storage time and peak turn-off gate current
vs. turn-off current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05
page 7 of 9
ABB [ THE ABB GROUP ]
