5SGA 25H2501
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage
V
R
may exceed the rate
value V
RRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative
during this time. Recommendation : V
GR
= 10… 15 V.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Tel:
Fax:
E-mail
Internet
+41 (0)62 888 6419
+41 (0)62 888 6306
Doc. No. 5SYA1206-01 Jun. 04
ABB [ THE ABB GROUP ]
