V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
DClin
=
=
=
=
=
=
2500
2500
16
1.66
0.57
1400
V
A
kA
V
mΩ
V
Gate turn-off Thyristor
5SGA 25H2501
Doc. No. 5SYA1206-01 Dec. 04
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
V
DRM
V
RRM
I
DRM
I
RRM
V
DClink
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Permanent DC voltage for 100
FIT failure rate
≤
≤
2500
17
30
50
1400
V
V
mA
mA
V
V
D
= V
DRM
V
R
= V
RRM
V
GR
≥
2V
R
GK
=
∞
V
GR
≥
2V
-40
≤
T
j
≤
125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data
(see Fig. 19)
F
m
Mounting force
A
Acceleration:
Device unclamped
Device clamped
M
D
S
D
a
Weight
Surface creepage distance
Air strike distance
≥
≥
50 m/s
2
200 m/s
2
0.8 kg
22 mm
13 mm
min.
max.
17 kN
24 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
