5SDF 02D6004
Irr [A]
400
IF [A]
1200
Tj = 115°C
Tj = 115°C
1100
1000
900
800
700
600
500
400
300
200
100
0
diF/dt = 190 A/µs
VDClink = 3300 V
350
300
250
200
150
100
50
0
0
100
200
300
400
500
600
3
4
5
6
7
8
9
10
11
IFQ [A]
VF [V]
Fig. 2 Forward current vs. forward voltage
Fig. 3 Diode reverse recovery current vs. turn-off
current
IFQ [A]
Err [J]
600
2.0
Tj = 115°C
1.8
diF/dt = 190 A/µs
500
VDClink = 3300 V
1.6
Tj = 0 - 115°C
diF/dt = 190 A/µs
VRM £ VRRM
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
400
300
200
100
0
0
1000
2000
3000
4000
5000
0
100
200
300
400
500
600
VDClink [V]
IFQ [A]
Fig. 4 Diode turn-off energy per pulse vs. turn-off
Fig. 5 Max. repetitive diode forward current
current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02
page 4 of 5
ABB [ THE ABB GROUP ]
