5SDF 02D6004
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
IF(AV)M Half sine wave, TC = 70 °C
min
typ
max
175
Unit
Max. average on-state
current
A
Max. RMS on-state current IF(RMS)
275
3×103
A
A
Max. peak non-repetitive
surge current
IFSM
tp = 10 ms, Tvj = 115°C, VR = 0 V
tp = 1 ms, Tvj = 115°C, VR = 0 V
Limiting load integral
I2t
45×103 A2s
8×103
Max. peak non-repetitive
surge current
IFSM
A
Limiting load integral
Characteristic values
Parameter
I2t
32×103 A2s
Symbol Conditions
min
min
typ
typ
max
7.1
Unit
V
On-state voltage
Threshold voltage
Slope resistance
VF
IF = 520 A, Tvj = 115°C
V(T0)
rT
Tvj = 115°C
IF = 200...1000 A
3.35
7.2
V
mW
Turn-on
Characteristic values
Parameter
Symbol Conditions
max
Unit
Peak forward recovery
voltage
VFRM
dIF/dt = 1000 A/µs, Tvj = 115°C
370
V
Turn-off
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
typ
max
Unit
Max. decay rate of on-state di/dtcrit
current
Characteristic values
IFM = A, Tvj = 115 °C
VDC-link = 3300 V
220
A/ms
Parameter
Symbol Conditions
max
Unit
A
Reverse recovery current
Reverse recovery charge
Turn-off energy
IRM
Qrr
Err
IFQ = 520 A, VDC-Link = 3300 V
di/dt = 220 A/µs, LCL = nH
300
µC
J
CCL
=
µF, RCL = W, Tj = 115°C
1.8
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02
page 2 of 5
ABB [ THE ABB GROUP ]
