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5SDD24F2800 参数 Datasheet PDF下载

5SDD24F2800图片预览
型号: 5SDD24F2800
PDF下载: 下载PDF文件 查看货源
内容描述: 整流器器二极管 [Rectifier Diode]
分类和应用: 二极管
文件页数/大小: 5 页 / 145 K
品牌: ABB [ THE ABB GROUP ]
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5SDD 24F2800
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
FAVM
50 Hz, Half sine wave, T
C
= 85 °C
min
typ
max
2596
4078
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
Max. RMS on-state current I
FRMS
I
FSM
I
2
t
I
FSM
I
2
t
Symbol Conditions
V
F
V
(T0)
r
T
I
F
= 3000 A, T
j
= 160°C
T
j
= 160°C
I
T
= 3140...9420 A
min
typ
t
p
= 8.3 ms, T
j
= 160°C,
V
R
= 0 V
t
p
= 10 ms, T
j
= 160°C,
V
R
= 0 V
30×10
4.5×10
32×10
4.262×10
3
6
3
6
Parameter
On-state voltage
Threshold voltage
Slope resistance
max
1.3
0.906
0.135
Switching
Characteristic values
Parameter
Symbol Conditions
Q
rr
di
F
/dt = -30 A/
µs, V
R
= 100 V
min
typ
3000
max
3500
Unit
µAs
Recovery charge
I
FRM
= 1000 A, T
j
= 160°C
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
-40
-40
min
typ
max
160
160
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
Anode-side cooled
Cathode-side cooled
Double-side cooled
Single-side cooled
typ
max
15
24
40
4
8
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
thJC
(t) =
å
R
i
(1 - e
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
6.060
0.6937
2
3.850
0.2040
3
3.780
n
- t/
τ
i
)
4
1.320
0.0040
Fig. 1
Transient thermal impedance junction-to-
case.
0.0452
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1167-00 Jan. 03
page 2 of 5