V
RSM
I
FAVM
I
FRMS
I
FSM
V
F0
r
F
=
=
=
=
=
=
3000
2596
4078
30×10
3
0.906
0.135
V
A
A
A
V
mΩ
Ω
Rectifier Diode
5SDD 24F2800
Doc. No. 5SYA1167-00 Jan. 03
•
Very low on-state losses
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Repetetive peak reverse voltage
Characteristic values
Symbol Conditions
V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= -40...160°C
f = 5 Hz, t
p
= 10ms, T
j
= -40...160°C
min
typ
Value
2800
3000
max
50
Unit
V
V
Unit
mA
Non - repetetive peak reverse voltage V
RSM
Parameter
Max. (reverse) leakage current
Symbol Conditions
I
RRM
V
RRM
, Tj = 160°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
20
typ
22
max
24
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Pole-piece diameter
Surface creepage distance
Symbol Conditions
m
H
D
P
D
S
min
typ
0.5
26
47
max
33
Air strike distance
D
a
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
