Buffered Power Half-Bridge
Electrical Characteristics
V
IN
= 5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= 25°C.
Symbol
V
IN
I
QAC
I
QDC
I
Q(OFF)
I
SD(OFF)
R
DS(ON)H
AAT4900
Description
Operation Voltage
AC Quiescent Current
DC Quiescent Current
Off-Supply Current
Off-Switch Current
Conditions
Min
2.0
Typ
4
Max Units
5.5
9
1
1
1
165
195
145
175
0.8
V
mA
µA
µA
µA
mΩ
R
DS(ON)L
V
ONL
V
ONH
I
SINK
T
BBM
T
ON-DLY
T
HIZ
IN = 5V, EN = IN, CLK = 1MHz, I
LX
= 0
IN = 5V, EN = IN, CLK = GND, I
LX
= 0
EN = CLK = GND, IN = LX = 5.5V
EN = GND, IN = 5.5V, V
OUT
= 0 or LX = IN
IN = 5V, T
A
= 25°C
High Side MOSFET
IN = 3V, T
A
= 25°C
On Resistance
IN = 2V, T
A
= 25°C
IN = 5V, T
A
= 25°C
Low Side MOSFET
IN = 3V, T
A
= 25°C
On Resistance
IN = 2V, T
A
= 25°C
CLK, EN Input Low Voltage IN = 2.7V to 5.5V
IN = 2.7V to
≤4.2V
1
CLK, EN Input High Voltage
IN = >4.2V to 5V
1
CLK, EN Input Leakage
CLK, EN = 5.5V
CLK Rising
Break-Before-Make Time
CLK Falling
CLK Rising
CLK to LX Delay
CLK Falling
CLK = GND
EN to OUT HiZ Delay
CLK = IN
0.03
130
165
235
105
135
200
2.0
2.4
0.01
5
5
30
40
40
40
mΩ
V
V
1
µA
ns
ns
ns
1. For V
IN
outside this range, consult CLK/Enable Threshold vs. Input Voltage curve.
4
4900.2006.05.1.3
AAT [ ADVANCED ANALOG TECHNOLOGY, INC. ]
