AP60T03AH/J
f=1.0MHz
10000
1000
100
12
I D =20A
V
V
V
DS =16V
DS =20V
DS =24V
9
6
3
0
Ciss
Coss
Crss
10
0
6
12
18
24
1
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty Factor = 0.5
0.2
0.1
0.1
100us
1ms
0.05
PDM
0.02
t
0.01
T
Single Pulse
10ms
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
100ms
DC
T C =25 o C
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
OSCILLOSCOPE
TO THE
VDS
D
D
S
OSCILLOSCOPE
0.8 x RATED VDS
0.5 x RATED VDS
G
RG
G
VGS
S
+
-
+
-
10V
VGS
1~ 3 mA
IG
2E+08ID
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
