AP60T03AH/J
125
100
75
50
25
0
90
60
30
0
T C =175 o C
10V
8.0V
10V
8.0V
T C =25 o C
6.0V
5.0V
6.0V
5.0V
V G =4.0V
V G =4.0V
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
60
40
20
0
2
1.6
1.2
0.8
0.4
I D =20A
V G =10V
I D =15A
T
C =25 ℃
Ω
Ω
Ω
Ω
2
4
6
8
10
-50
25
100
175
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
10
1
2.8
2.3
1.8
1.3
0.8
0.3
Tj=175 o C
Tj=25 o C
0.1
0
0.5
1
1.5
-50
25
100
175
T j , Junction Temperature ( o C )
V SD (V) , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
