AP4407F/I
f=1.0MHz
14
10000
-V
GS
, Gate to Source Voltage (V)
12
I
D
= - 24 A
V
DS
= -24V
C
iss
C (pF)
10
8
1000
6
C
oss
C
rss
4
2
0
100
0
20
40
60
80
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
-I
D
(A)
0.1
100us
1ms
10
0.1
0.05
P
DM
0.02
t
T
T
C
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
