AP4407F/I
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-30V
14mΩ
-50A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220FM(F)
The TO-220 isolation package is universally preferred for all commercial-
industrial applications and suited for low voltage applications such as
DC/DC converters and high current ,high speed
switching circuits.
G
D
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
S
TO-220CFM(I)
Units
V
V
A
A
A
W
W/℃
℃
℃
Rating
-30
±25
-50
-32
180
33.6
0.27
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.72
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
200305041
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
