AP4232GM-HF
f=1.0MHz
16
1000
I
D
=7A
V
GS
, Gate to Source Voltage (V)
C
iss
12
8
C (pF)
V
DS
=15V
V
DS
=20V
V
DS
=24V
C
oss
4
C
rss
0
0
5
10
15
20
25
30
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
100us
1ms
I
D
(A)
1
0.1
0.1
0.05
10ms
100ms
0.02
P
DM
t
T
Single Pulse
0.01
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135℃/W
0.1
1s
T
A
=25 C
Single Pulse
o
DC
1
10
100
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
I
D
, Drain Current (A)
T
j
=25
o
C
20
V
G
T
j
=150
o
C
Q
G
4.5V
Q
GS
Q
GD
10
Charge
0
Q
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
