AP4232GM-HF
40
40
T
A
= 25 C
I
D
, Drain Current (A)
30
o
I
D
, Drain Current (A)
10V
7.0 V
5.0 V
4.5 V
T
A
= 150
o
C
10V
7.0 V
5.0 V
4.5 V
30
20
20
10
V
G
= 3.0 V
10
V
G
= 3.0 V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
30
Fig 2. Typical Output Characteristics
1.6
I
D
=5A
T
A
=25
℃
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
I
D
=7A
V
G
=10V
1.3
25
20
1.0
15
2
4
6
8
10
0.7
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
Normalized V
GS(th)
(V)
1.2
6
1.5
I
S
(A)
4
1.0
T
j
=150 C
2
o
T
j
=25 C
o
0.5
0
0.0
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
