AP4002S/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=1.0A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2.0A
V
DS
=600V, V
GS
=0V
V
GS
=±30V
I
D
=2A
V
DS
=480V
V
GS
=10V
V
DD
=200V
I
D
=1A
R
G
=50Ω,V
GS
=10V
R
D
=200Ω
V
GS
=0V
V
DS
=10V
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.5
-
-
12
2
5.5
10
12
52
19
375
170
45
Max. Units
-
5
4
-
100
±1
19
-
-
-
-
-
-
600
-
-
V
Ω
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting T
j
=25 C , V
DD
=50V , L=10mH , R
G
=25Ω
3.Pulse test
o
Parameter
Forward On Voltage
3
Test Conditions
I
S
=2A, V
GS
=0V
I
S
=2A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
340
2.2
Max. Units
1.5
-
-
V
ns
µC
Reverse Recovery Time
3
Reverse Recovery Charge
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
