AP4002S/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristics
▼
Simple Drive Requirement
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
5Ω
2A
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is
widely
preferred for commercial-industrial
surface mount applications and suited for power
applications.The
through-hole
version (AP4002P) are available for
low-profile applications.
G
G D
S
TO-263(S)
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
±30
2
8
20
0.16
2
Units
V
V
A
A
W
W/℃
mJ
A
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
20
2
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum
Thermal Resistance, Junction-case
Maximum
Thermal Resistance, Junction-ambient
Value
6.25
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
201019072-1/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
