AP3303H/J
16
10000
f=1.0MHz
I
D
=20A
14
V
GS
, Gate to Source Voltage (V)
12
10
V
DS
=12V
V
DS
=16V
V
DS
=20V
C (pF)
1000
8
Ciss
Coss
100
6
Crss
4
2
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Normalized Thermal Response (R
thjc
)
DUTY=0.5
0.2
I
D
(A)
0.1
0.1
0.05
10
10ms
o
P
DM
0.02
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
T
c
=25 C
Single Pulse
1
0.1
1
10
100ms
1s
DC
100
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
